型番：　メーカー：三菱電機株式会社　商品コード：L000435

660nm Semiconductor Laser Diode

波長: 660nm-660nm
出力: 350mW-350mW
パッケージ: TO-can
テクノロジー: Pulsed and CW

660nm ML1XX27 SERIES MITSUBISHI LASER DIODES FOR OPTICAL INFORMATION SYSTEMS:
ML1XX27 is a high-power, high-efficiency AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658nm and standard pulse light output of 350mW. The ML1XX27 has a real index waveguide which improves the slope efficiency (reduction of the operating current) and the astigmatic distance. Also, the ML1XX27 has a window-mirror-facet which improves the maximum output power. This leads to highly reliable high-power operation at 75 °C.
FEATURES:
- High Output Power: 350mW (Pulse)
- High Efficiency: 0.95W/A (typ.)
- Visible Light: 660nm (typ.)
- Low Aspect Ratio (q^ / q//): 1.7 (typ.)
- Low Astigmatic Distance: 1mm (typ.)

Applications include portable high-density optical disc drives and re-writable DVD Drives.

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660nm Semiconductor Laser Diode

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