波長: 980nm-
出力: 475mW-
電流: 45mA-
電圧: 350mW-430mW
パッケージ: butterfly

The 1999HPM is a new generation of 980 nm terrestrial pump modules powered by an in-house chip technology. Low Profile, 14-pin butterfly modules are available with an operating power up to 430mW. They incorporate a thermoelectric cooler (TEC), a precision NTC thermistor and a back-facet monitoring photodiode. The wavelength is “locked” utilizing a fiber brag grating (FBG) located in a Single Mode HI1060 Fiber (SMF) pigtail. The module meets TelcordiaTM GR-468-Core requirements for hermetic 980nm pump modules.

The following parameters are specified BOL for a Tsubmount = 25 °C, Tcase = -5 °C to 75 °C, VBFM = -5 V and -50 dB max back-reflection unless otherwise stated.
[PUMP LASER]
Threshold current (mA)：Typ. 45　Max 60
Kink free power (mW)：Min 1.1 x Pnom
Forward current (mA) Typ. / Max
Pnom= 350 mW：　　525　590
Pnom= 360 mW：　　540　605
Pnom= 400 mW：　　600　670
Pnom= 410 mW：　　620　685
Pnom= 430 mW：　　645　700
Forward voltage @ 430 mW (V)：Typ. 1.8　Max 2.1
Peak wavelength tolerance (nm) @ Tcase= TFBG= 25 °C 0.1 x Pnom to Pnom ： ±0.5
Wavelength tuning vs temperature (Tgrating= -5 to 75 °C) (nm / °C) 0.1 x Pnom to Pnom：Typ. 0.01　Max 0.02
Spectral width @ -3 dB (nm) 0.1 x Pnom to Pnom：Max 1.0
Power in band (%) Pnom：Min 90
Optical power stability (%) Peak to peak, 10 Hz-50 kHz, 60 sec, Pnom：Typ. <1　Max 2
Power consumption, EOL (W) Pnom = 430 mW：Max 6.0

[MONITOR DIODE]
Responsivity (µA / mW)：Min 0.5　Max 10
Dark current (nA) Vr = 5 V：Typ. 50　Max 100

[THERMO-ELECTRICAL COOLER]
Cooling capacity (°C)：Min 50
TEC voltage (EOL) (V) Tcase= 75 °C, 1.1 x Inom：Max 2.5
TEC current (EOL) (A)：Max 2.0
TEC Power consumption (W)：Max 5.0

[THERMISTOR]
Resistance (kΩ)25 °C：Min 9.5　Typ. 10　Max10.5
Constant (K)：Min 3600　Max 4200

(1) Ith is the intersection point with the x-axis of a linear fit of the P(I) curve between 15 mW and 50 mW
(2) A kink is detected when the local slope dP/dI is below Smin or above Smax. Smin is defined as 0.5xSavg and Smax is defined as 1.5xSavg
(3) EOL forward current I(EOL)= 1.1x I(BOL)
(4) Pband is defined as the power within the band p ±1.5 nm vs the total output power